a p6679gh/j-hf advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -30v simple drive requirement r ds(on) 9m fast switching characteristic i d -75a rohs compliant description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.4 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice parameter total power dissipation operating junction temperature range storage temperature range linear derating factor -55 to 150 thermal data parameter drain-source voltage gate-source voltage drain current, v gs @ 10v 3 drain current, v gs @ 10v -50 pulsed drain current 1 -300 rating -30 201501065 halogen-free product 1 + 20 -75 0.71 89 -55 to 150 maximum thermal resistance, junction-ambient (pcb mount) 4 g d s g d s to-252(h) g d s to-251(j) a p6679 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. the through-hole version (ap6679gj) are available for low-profile applications.
ap6679gh/j-hf electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-30a - - 9 m ? v gs =-4.5v, i d =-24a - - 15 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-24a - 34 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =125 o c) v ds =-24v, v gs =0v - - -250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-16a - 42 67 nc q gs gate-source charge v ds =-24v - 6 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 25 - nc t d(on) turn-on delay time 2 v ds =-15v - 11 - ns t r rise time i d =-16a - 35 - ns t d(off) turn-off delay time r g =3.3 -58- ns t f fall time v gs =-10v - 78 - ns c iss input capacitance v gs =0v - 2870 4590 pf c oss output capacitance v ds =-25v - 960 - pf c rss reverse transfer capacitance f=1.0mhz - 740 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-24a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-16a, v gs =0v, - 47 - ns q rr reverse recovery charge di/dt=-100a/s - 43 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is -75a . this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 4.surface mounted on 1 in 2 copper pad of fr4 board 2
ap6679gh/j-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 7 9 11 13 15 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -24a t c =25 0 40 80 120 160 200 240 280 0 0.5 1 1.5 2 2.5 3 3.5 4 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -8.0v -6.0v -4.5v v g =-3.0v 0.6 1 1.4 1.8 2.2 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -30a v g = -10v 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -8.0v -6.0v -4.5v v g =-3.0v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap6679gh/j-hf 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 1 2 3 4 5 6 7 0 102030405060 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -16a v ds = -24v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms 1s dc t c =25 o c single pulse
ap6679gh/j-hf marking information to-251 to-252 5 part numbe r package code meet rohs requirement for low voltage mosfet only 6679gj ywwsss date code (ywwsss) y last digit of the year ww week sss sequence part numbe r package code date code (ywwsss) y last digit of the year ww week sss sequence 6679gh ywwsss meet rohs requirement for low voltage mosfet only
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